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Light-output enhancement of GaN-based vertical light-emitting diodes using periodic and conical nanopillar structures
- Authors
- Kim, Su Jin; Kim, Kyeong Heon; Chung, Ho Young; Shin, Hee Woong; Lee, Byeong Ryong; Jeong, Tak; Park, Hyung Jo; Kim, Tae Geun
- Issue Date
- 15-6월-2014
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICS LETTERS, v.39, no.12, pp.3464 - 3467
- Indexed
- SCIE
SCOPUS
- Journal Title
- OPTICS LETTERS
- Volume
- 39
- Number
- 12
- Start Page
- 3464
- End Page
- 3467
- ISSN
- 0146-9592
- Abstract
- We investigated GaN-based vertical light-emitting diodes (VLEDs) with periodic and conical nanopillar arrays (CNAs) to improve the light-output efficiency. We found that a 470 nm diameter and 0.8-0.9 m height increased the light output, and the devices suffered no significant electrical property degradations. The light-output power was 272% and 5.1% greater than flat-and rough-surface VLEDs at 350 mA, respectively. These improved optical properties are attributed to the optimized CNAs, which increase the effective photon escape cone and reduce the total internal reflection at the n-GaN-air interface. We also investigated the emission characteristics and mechanisms with finite-difference time-domain simulations. (C) 2014 Optical Society of America
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