Precise control over oxygen impurities in nano-crystalline silicon thin film processed with a low hydrogen dilution gas system at near room temperature
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Jin Nyoung | - |
dc.contributor.author | Lee, Dong Hyeok | - |
dc.contributor.author | Hong, MunPyo | - |
dc.date.accessioned | 2021-09-05T08:18:23Z | - |
dc.date.available | 2021-09-05T08:18:23Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-06 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/98335 | - |
dc.description.abstract | An atmosphere highly diluted with hydrogen is essential to increase the crystal fraction during formation of hydrogenated nano-crystalline (nc) or micro-crystalline (mu c) silicon thin films via chemical vapor deposition (CVD). This hydrogen-rich process, however, hinders the ability for the material to find adequate use in micro-electronic devices due to contamination that results in oxygen-related problems such as donor-like doping, defect creation, or passivation. The use of neutral beam assisted chemical vapor deposition (NBaCVD), with a low hydrogen ratio (R = H-2/SiH4) of 4, successfully deposits a highly-crystallized nc-silicon (HC nc-Si) thin film (TF) at near room temperature (<80 degrees C) and effectively reduces oxygen contamination by as much as 100 times when compared to conventional plasma enhanced CVD. During the formation of HC nc-Si TF via NBaCVD, energetic hydrogen atoms directly react with oxygen atoms near the surface of the nc-Si TF and remove the oxygen impurities. This is a completely different mechanism from the hydrogen-enhanced oxygen diffusion model. This technology meets the recent requirements of a high deposition rate and low temperature necessary for flexible electronics. (C) 2014 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | MICROCRYSTALLINE SILICON | - |
dc.subject | PARTICLE-BEAM | - |
dc.subject | GRAIN-BOUNDARIES | - |
dc.subject | SURFACES | - |
dc.subject | IONS | - |
dc.title | Precise control over oxygen impurities in nano-crystalline silicon thin film processed with a low hydrogen dilution gas system at near room temperature | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jang, Jin Nyoung | - |
dc.contributor.affiliatedAuthor | Hong, MunPyo | - |
dc.identifier.doi | 10.1016/j.cap.2014.03.023 | - |
dc.identifier.scopusid | 2-s2.0-84899787144 | - |
dc.identifier.wosid | 000336441400011 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.14, no.6, pp.901 - 904 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 14 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 901 | - |
dc.citation.endPage | 904 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001881986 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | MICROCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | PARTICLE-BEAM | - |
dc.subject.keywordPlus | GRAIN-BOUNDARIES | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | IONS | - |
dc.subject.keywordAuthor | Oxygen control | - |
dc.subject.keywordAuthor | Nano crystal silicon | - |
dc.subject.keywordAuthor | Low hydrogen ratio | - |
dc.subject.keywordAuthor | Neutral beam | - |
dc.subject.keywordAuthor | CVD | - |
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