Precise control over oxygen impurities in nano-crystalline silicon thin film processed with a low hydrogen dilution gas system at near room temperature
- Authors
- Jang, Jin Nyoung; Lee, Dong Hyeok; Hong, MunPyo
- Issue Date
- 6월-2014
- Publisher
- ELSEVIER
- Keywords
- Oxygen control; Nano crystal silicon; Low hydrogen ratio; Neutral beam; CVD
- Citation
- CURRENT APPLIED PHYSICS, v.14, no.6, pp.901 - 904
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 14
- Number
- 6
- Start Page
- 901
- End Page
- 904
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/98335
- DOI
- 10.1016/j.cap.2014.03.023
- ISSN
- 1567-1739
- Abstract
- An atmosphere highly diluted with hydrogen is essential to increase the crystal fraction during formation of hydrogenated nano-crystalline (nc) or micro-crystalline (mu c) silicon thin films via chemical vapor deposition (CVD). This hydrogen-rich process, however, hinders the ability for the material to find adequate use in micro-electronic devices due to contamination that results in oxygen-related problems such as donor-like doping, defect creation, or passivation. The use of neutral beam assisted chemical vapor deposition (NBaCVD), with a low hydrogen ratio (R = H-2/SiH4) of 4, successfully deposits a highly-crystallized nc-silicon (HC nc-Si) thin film (TF) at near room temperature (<80 degrees C) and effectively reduces oxygen contamination by as much as 100 times when compared to conventional plasma enhanced CVD. During the formation of HC nc-Si TF via NBaCVD, energetic hydrogen atoms directly react with oxygen atoms near the surface of the nc-Si TF and remove the oxygen impurities. This is a completely different mechanism from the hydrogen-enhanced oxygen diffusion model. This technology meets the recent requirements of a high deposition rate and low temperature necessary for flexible electronics. (C) 2014 Elsevier B.V. All rights reserved.
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