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Barrier Height at the Graphene and Carbon Nanotube Junction
- Authors
- Kim, Tae Geun; Kim, Un Jeong; Lee, Si Young; Lee, Young Hee; Yu, Yun Seop; Hwang, Sung Woo; Kim, Sangsig
- Issue Date
- Jun-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Barrier height; carbon nanotube (CNT); FET; graphene; SPICE
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.6, pp.2203 - 2207
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 61
- Number
- 6
- Start Page
- 2203
- End Page
- 2207
- ISSN
- 0018-9383
- Abstract
- Graphene/carbon nanotube (CNT) junction barrier height was investigated using all-carbon field-effect transistor structure with graphene and single-walled CNT (SWCNT) network as source (S)/drain (D)/gate electrodes and as channel, respectively. SWCNT network channel was formed by dielectricphoresis process at the prepatterned graphene S/D electrodes. By analyzing the measured current-voltage characteristics by the diode circuit model, the Schottky barrier height at the graphene and CNT junction was found to be approximately 0.5 eV.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)