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Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes

Authors
Park, Jae-SeongHan, JaecheonHa, Jun-SeokSeong, Tae-Yeon
Issue Date
28-4월-2014
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.104, no.17
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
104
Number
17
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/98733
DOI
10.1063/1.4874631
ISSN
0003-6951
Abstract
We report on the polarity dependence of the electrical properties of Ag reflectors for high-power GaN-based light-emitting diodes. The (0001) c-plane samples become ohmic after annealing in air. However, the (11-22) semi-polar samples are non-ohmic after annealing, although the 300 degrees C-annealed sample shows the lowest contact resistivity. The X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the c-plane samples experiences larger shift toward the valence band than that for the semi-polar samples. The XPS depth profile results show that unlike the c-plane samples, the semi-polar samples contain some amounts of oxygen at the Ag/GaN interface regions. The outdiffusion of Ga atoms is far more significant in the c-plane samples than in the semi-polar samples, whereas the outdiffusion of N atoms is relatively less significant in the c-plane samples. On the basis of the electrical and XPS results, the polarity dependence of the electrical properties is described and discussed (C) 2014 AIP Publishing LLC.
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SEONG, TAE YEON
공과대학 (신소재공학부)
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