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An electrochemical route to MoS2 nanosheets for device applications

Authors
You, XueqiuLiu, NaLee, Cheol JinPak, James Jungho
Issue Date
15-4월-2014
Publisher
ELSEVIER
Keywords
Electrochemical exfoliation; Field-effect transistor; Molybdenum disulfide; 2-D material
Citation
MATERIALS LETTERS, v.121, pp.31 - 35
Indexed
SCIE
SCOPUS
Journal Title
MATERIALS LETTERS
Volume
121
Start Page
31
End Page
35
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/98757
DOI
10.1016/j.matlet.2014.01.052
ISSN
0167-577X
Abstract
This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO42- and OH- ions intercalate into a bulk Mos(2) and they form gaseous SO2 or O-2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 10(3), the field-effect mobility on SiO2 gate dielectrics was 2 cm(2)/(V s). (C) 2014 Elsevier B.V. All rights reserved.
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