Transparent Multi-level Resistive Switching Phenomena Observed in ITO/RGO/ITO Memory Cells by the Sol-Gel Dip-Coating Method
- Authors
- Kim, Hee-Dong; Yun, Min Ju; Lee, Jae Hoon; Kim, Kyoeng Heon; Kim, Tae Geun
- Issue Date
- 9-4월-2014
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 4
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/98771
- DOI
- 10.1038/srep04614
- ISSN
- 2045-2322
- Abstract
- A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2 V to 7 V. In the reliability test, the device exhibited a good endurance of over 105 cycles and a long data retention of over 10(5) s at 85 degrees C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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