Switching Characteristics of Nanowire Feedback Field-Effect Transistors with Nanocrystal Charge Spacers on Plastic Substrates
DC Field | Value | Language |
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dc.contributor.author | Jeon, Youngin | - |
dc.contributor.author | Kim, Minsuk | - |
dc.contributor.author | Kim, Yoonjoong | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-05T10:02:49Z | - |
dc.date.available | 2021-09-05T10:02:49Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-04 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/98839 | - |
dc.description.abstract | In this study, we demonstrate the abruptly steep-switching characteristics of a feedback field-effect transistor (FBFET) with a channel consisting of a p(+)-i-n(+) Si nanowire (NW) and charge spacers of discrete nanocrystals on a plastic substrate. The NW FBFET shows superior switching characteristics such as an on/off current ratio of similar to 10(5) and an average subthreshold swing (SS) of 30.2 mV/dec at room temperature. Moreover, the average SS and threshold voltage values can be adjusted by programming. These sharp switching characteristics originate from a positive feedback loop generated by potential barriers in the intrinsic channel area. This paper describes in detail the switching mechanism of our device. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | I-MOS | - |
dc.subject | SILICON | - |
dc.subject | MEMORY | - |
dc.title | Switching Characteristics of Nanowire Feedback Field-Effect Transistors with Nanocrystal Charge Spacers on Plastic Substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1021/nn500494a | - |
dc.identifier.scopusid | 2-s2.0-84899450263 | - |
dc.identifier.wosid | 000334990600073 | - |
dc.identifier.bibliographicCitation | ACS NANO, v.8, no.4, pp.3781 - 3787 | - |
dc.relation.isPartOf | ACS NANO | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 8 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 3781 | - |
dc.citation.endPage | 3787 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | I-MOS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | subthreshold swing | - |
dc.subject.keywordAuthor | silicon nanowires | - |
dc.subject.keywordAuthor | feedback loop | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | plastic substrate | - |
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