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Switching Characteristics of Nanowire Feedback Field-Effect Transistors with Nanocrystal Charge Spacers on Plastic Substrates
- Authors
- Jeon, Youngin; Kim, Minsuk; Kim, Yoonjoong; Kim, Sangsig
- Issue Date
- 4월-2014
- Publisher
- AMER CHEMICAL SOC
- Keywords
- subthreshold swing; silicon nanowires; feedback loop; field-effect transistor; plastic substrate
- Citation
- ACS NANO, v.8, no.4, pp.3781 - 3787
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS NANO
- Volume
- 8
- Number
- 4
- Start Page
- 3781
- End Page
- 3787
- ISSN
- 1936-0851
- Abstract
- In this study, we demonstrate the abruptly steep-switching characteristics of a feedback field-effect transistor (FBFET) with a channel consisting of a p(+)-i-n(+) Si nanowire (NW) and charge spacers of discrete nanocrystals on a plastic substrate. The NW FBFET shows superior switching characteristics such as an on/off current ratio of similar to 10(5) and an average subthreshold swing (SS) of 30.2 mV/dec at room temperature. Moreover, the average SS and threshold voltage values can be adjusted by programming. These sharp switching characteristics originate from a positive feedback loop generated by potential barriers in the intrinsic channel area. This paper describes in detail the switching mechanism of our device.
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