Graphene diffusion barrier for forming ohmic contact on N-polar n-type GaN for high-power vertical-geometry light-emitting diodes
- Authors
- Kim, Dae-Hyun; Park, Jae-Seong; Seong, Tae-Yeon
- Issue Date
- Apr-2014
- Publisher
- IOP PUBLISHING LTD
- Citation
- APPLIED PHYSICS EXPRESS, v.7, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 7
- Number
- 4
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/98888
- DOI
- 10.7567/APEX.7.046501
- ISSN
- 1882-0778
- Abstract
- Graphene sheets were employed as a diffusion barrier to form highly reliable ohmic contacts to N-polar n-GaN for high-power vertical-configuration LEDs (VLEDs). Before annealing, both Ti/Al and Ti/graphene/Al contacts exhibit ohmic behavior. After annealing at 250 degrees C, unlike the Ti/Al contact, the Ti/graphene/Al contacts remain ohmic with a contact resistivity of 7.5 x 10(-4) Omega cm(2) Secondary ion mass spectroscopy (SIMS) results show that the graphene sheets serve as a barrier to the outdiffusion of Ga atoms into the electrode. On the basis of SIMS and X-ray photoemission spectroscopy results, the ohmic and degradation behaviors of the Ti-based contacts are described and discussed. (C) 2014 The Japan Society of Applied Physics
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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