Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate
- Authors
- Liu, Lu; Hwang, Ya-Hsi; Xi, Yuyin; Ren, Fan; Craciun, Valentin; Pearton, Stephen J.; Yang, Gwangseok; Kim, Hong-Yeol; Kim, Jihyun
- Issue Date
- 3월-2014
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.32, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 32
- Number
- 2
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/99138
- DOI
- 10.1116/1.4866401
- ISSN
- 1071-1023
- Abstract
- The effects of proton irradiation dose on the dc characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with source field plates were studied. The HEMTs were irradiated with various protons doses ranging from 5 x 10(12) to 5 x 10(15) cm(-2) at a fixed energy of 5 MeV. HEMTs irradiated with proton dose below 5 x 10(13) cm(-2) showed less than 2% degradation of either saturation drain current (I-DSS) or transconductance (g(m)). Significant changes of these parameters were observed for the devices irradiated with doses above 5 x 10(13) cm(-2). HEMTs irradiated with the highest proton dose of 5 x 10(15) cm(-2) showed a reduction of I-DSS and g(m) of 86% and 64.7%, and a positive V-th shift of 0.84 V, respectively. Despite the significant I-DSS and g(m) reductions, the off-state drain breakdown voltage (V-BR) was improved more than five times at this particular irradiation condition. The significant improvement of off-state drain breakdown voltage was attributed to the formation of a virtual gate at drain side of gate edge, which was the result of the generation of defect centers at AlGaN/GaN interface. (C) 2014 American Vacuum Society.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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