Effect of annealing on the magnetic anisotropy of GaMnAs film with low Mn concentration
DC Field | Value | Language |
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dc.contributor.author | Byeon, Hyehyeon | - |
dc.contributor.author | Lee, Sangyeop | - |
dc.contributor.author | Yoo, Taehee | - |
dc.contributor.author | Lee, Sanghoon | - |
dc.contributor.author | Liu, X. | - |
dc.contributor.author | Furdyna, J. K. | - |
dc.date.accessioned | 2021-09-05T11:15:40Z | - |
dc.date.available | 2021-09-05T11:15:40Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-03 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/99241 | - |
dc.description.abstract | The effect of annealing on the magnetic anisotropy of a GaMnAs film with a low Mn composition of 2% has been investigated. Hall measurements have been performed with an external field applied in- and out-of-plane. In as-grown samples, the behavior of the Hall resistance indicates that the out-of-plane magnetic anisotropy dominates over the in-plane anisotropy. The vertical anisotropy, however, gradually decreased with increasing annealing temperatures and changed to in-plane dominant anisotropy in the film annealed at 300 degrees C. Furthermore, it was found that the direction of the uniaxial anisotropy in the domain with the in-plane easy axes, changed from the [110] direction in as-grown film to the [1 (1) over bar0] direction in the annealed film. This revealed that annealing altered the magnetic anisotropy of the GaMnAs film between out-of-plane and in-plane directions as well as within the film plane. (C) 2013 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | GA1-XMNXAS | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | FERROMAGNETISM | - |
dc.title | Effect of annealing on the magnetic anisotropy of GaMnAs film with low Mn concentration | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Sanghoon | - |
dc.identifier.doi | 10.1016/j.cap.2013.11.046 | - |
dc.identifier.scopusid | 2-s2.0-84899460316 | - |
dc.identifier.wosid | 000335804900008 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.14, pp.S34 - S38 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 14 | - |
dc.citation.startPage | S34 | - |
dc.citation.endPage | S38 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GA1-XMNXAS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | FERROMAGNETISM | - |
dc.subject.keywordAuthor | Planar Hall effect | - |
dc.subject.keywordAuthor | Magnetic anisotropy | - |
dc.subject.keywordAuthor | Ferromagnetic semiconductors | - |
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