Effect of annealing on the magnetic anisotropy of GaMnAs film with low Mn concentration
- Authors
- Byeon, Hyehyeon; Lee, Sangyeop; Yoo, Taehee; Lee, Sanghoon; Liu, X.; Furdyna, J. K.
- Issue Date
- 3월-2014
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Planar Hall effect; Magnetic anisotropy; Ferromagnetic semiconductors
- Citation
- CURRENT APPLIED PHYSICS, v.14, pp.S34 - S38
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 14
- Start Page
- S34
- End Page
- S38
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/99241
- DOI
- 10.1016/j.cap.2013.11.046
- ISSN
- 1567-1739
- Abstract
- The effect of annealing on the magnetic anisotropy of a GaMnAs film with a low Mn composition of 2% has been investigated. Hall measurements have been performed with an external field applied in- and out-of-plane. In as-grown samples, the behavior of the Hall resistance indicates that the out-of-plane magnetic anisotropy dominates over the in-plane anisotropy. The vertical anisotropy, however, gradually decreased with increasing annealing temperatures and changed to in-plane dominant anisotropy in the film annealed at 300 degrees C. Furthermore, it was found that the direction of the uniaxial anisotropy in the domain with the in-plane easy axes, changed from the [110] direction in as-grown film to the [1 (1) over bar0] direction in the annealed film. This revealed that annealing altered the magnetic anisotropy of the GaMnAs film between out-of-plane and in-plane directions as well as within the film plane. (C) 2013 Elsevier B.V. All rights reserved.
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