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Solution processed high band-gap CuInGaS2 thin film for solar cell applications
- Issue Date
- Jan-2014
- Publisher
- WILEY
- Keywords
- high band-gap; CIGS; CuInxGa1-xS2; solution process; solar cells
- Citation
- PROGRESS IN PHOTOVOLTAICS, v.22, no.1, pp.122 - 128
- Indexed
- SCIE
SCOPUS
- Journal Title
- PROGRESS IN PHOTOVOLTAICS
- Volume
- 22
- Number
- 1
- Start Page
- 122
- End Page
- 128
- ISSN
- 1062-7995
- Abstract
- A high band-gap (similar to 1.55eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2 crystallites. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (similar to 787mV) with a power conversion efficiency of 8.28% under standard irradiation conditions. Copyright (c) 2013 John Wiley & Sons, Ltd.
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