ScholarWorks@Korea University

Browsing by Seo, Yu JeongAuthor

All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 10 of 10

SCISCIESCOPUS
A Direct Observation of the Distributions of Local Trapped-Charges and the Interface-States near the Drain Region of the Silicon-Oxide-Nitride-Oxide-Silicon Device for Reliable Four-Bit/Cell Operations

An, Ho-Myoung; Zhang, Yongjie; Kim, Hee-Dong; Seo, Yu Jeong; Kim, Byungcheul; Kim, Joo-Yeon; Kim, Tae Geun

ArticleIssue Date2010CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.11PublisherIOP PUBLISHING LTD
SCISCIESCOPUS
A New Class of Charge-Trap Flash Memory With Resistive Switching Mechanisms

An, Ho-Myoung; Lee, Eui Bok; Kim, Hee-Dong; Seo, Yu Jeong; Kim, Tae Geun

ArticleIssue Date2010CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.10, pp 2398 - 2404PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk; Cho, Won-Ju; Koh, Jung-Hyuk; Sung, Yun Mo; Kim, Tae Geun

ArticleIssue Date2009CitationTHIN SOLID FILMS, v.517, no.18, pp 5589 - 5592PublisherELSEVIER SCIENCE SA
SCISCIESCOPUS
Improved Electrical and Reliability Characteristics in Metal/Oxide/Nitride/Oxide/Silicon Capacitors with Blocking Oxide Layers Formed Under the Radical Oxidation Process

An, Ho-Myoung; Kim, Hee Dong; Seo, Yu Jeong; Kim, Kyoung Chan; Sung, Yun Mo; Koo, Sang-Mo; Koh, Jung-Hyuk; Kim, Tae Geun

ArticleIssue Date2010CitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.10, no.7, pp 4701 - 4705PublisherAMER SCIENTIFIC PUBLISHERS
SCIESCOPUSKCI
Improved Performance in Charge-Trap-Type Flash Memories with an Al2O3 Dielectric by Using Bandgap Engineering of Charge-Trapping Layers

Seo, Yu Jeong; An, Ho Myoung; Kim, Hee Dong; Kim, Tae Geun

ArticleIssue Date2009CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.6, pp 2689 - 2692PublisherKOREAN PHYSICAL SOC
SCIESCOPUS
Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

ArticleIssue Date2008CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.23, no.7PublisherIOP PUBLISHING LTD
SCIESCOPUSKCI
Investigation of Simulated and Measured Program Characteristics in 4-bit/cell Charge-trap Flash (CTF) Memories

Kim, Jae Moo; Seo, Yu Jeong; An, Ho-Myoung; Kim, Tae Geun; Park, Sung-Wook; Kim, Dae Hwan

ArticleIssue Date2009CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp 367 - 371PublisherKOREAN PHYSICAL SOC
SCISCIESCOPUS
Low-resistance Ni/Al Ohmic contacts applied to a nonpolar a-plane n-type GaN

Kim, Dong Ho; Kim, Su Jin; Seo, Yu Jeong; Kim, Tae Geun; Hwang, Sung Min

ArticleIssue Date2011CitationAPPLIED PHYSICS LETTERS, v.98, no.16PublisherAMER INST PHYSICS
SCIESCOPUSKCI
Study of Hole Traps in the Oxide-Nitride-Oxide Structure of the SONOS Flash Memory

Seo, Yu Jeong; Kim, Kyoung Chan; Kim, Hee Dong; Kim, Tae Geun; An, Ho-Myoung

ArticleIssue Date2008CitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.6, pp 3302 - 3306PublisherKOREAN PHYSICAL SOC
SCISCIESCOPUS
Substrate-Bias Assisted Hot Electron Injection Method for High-Speed, Low-Voltage, and Multi-Bit Flash Memories

An, Ho-Myoung; Kim, Hee-Dong; Zhang, Yongjie; Seo, Yu Jeong; Kim, Tae Geun

ArticleIssue Date2011CitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.12PublisherIOP PUBLISHING LTD
1
CONTACT US

RSS_1.0 RSS_2.0 ATOM_1.0

145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963

COPYRIGHT © 2021 Korea University. All Rights Reserved.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

BROWSE

한국어