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Improved Performance in Charge-Trap-Type Flash Memories with an Al2O3 Dielectric by Using Bandgap Engineering of Charge-Trapping Layers
- Authors
- Seo, Yu Jeong; An, Ho Myoung; Kim, Hee Dong; Kim, Tae Geun
- Issue Date
- Dec-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- SANOS; Si-rich; ANO; Bandgap engineering
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.6, pp.2689 - 2692
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 6
- Start Page
- 2689
- End Page
- 2692
- ISSN
- 0374-4884
- Abstract
- A band-engineered configuration of the new polycrystalline Si / Al2O3 / Si3N4 / SiO2 /Si (SANOS) device structure with a non-uniform nitride composition is proposed for high-density flash memories. The dramatic improvement can be attributed to the charge trapping efficiency, the data retention and the cycling endurance performance. The SANOS device designed in this paper holds promise for applications to next-generation charge-trap memory devices.
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)