Investigation of Simulated and Measured Program Characteristics in 4-bit/cell Charge-trap Flash (CTF) Memories
- Authors
- Kim, Jae Moo; Seo, Yu Jeong; An, Ho-Myoung; Kim, Tae Geun; Park, Sung-Wook; Kim, Dae Hwan
- Issue Date
- 7월-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- 4-bit-per-cell; SONOS; NROM (TM); Localized trapped charge
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.367 - 371
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 1
- Start Page
- 367
- End Page
- 371
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/119768
- ISSN
- 0374-4884
- Abstract
- We investigate the simulated and measured program characteristics for 4-bit program operations in silicon-oxide-nitride-oxide-silicon (SONOS) devices by using two-dimenhsional (2-D) device simulations. For this calculation, the width of the region with charge trapped locally in the drain region is assumed to be as narrow as 44 nm to remove second-bit effects during the 2-bit and 4-bit operation. We determine the reverse read voltage for screening bit-1 to be 2.5 V and confirm that both 2-bit and 4-bit; characteristics are successfully observed in our devices. From the threshold voltage shift, the densities of trapped charge, axe estimated to be 0 x 10(19), 3 x 10(19), 6 x 10(19) and 9 x 10(19) cm(-3) at 4-level states, respectively. We also find that these simulation results are reasonably consistent with the experimental results achieved in this work.
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