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SCIESCOPUS
Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

Yoon, Changjoon; Kang, Jeongmin; Yeom, Donghyuk; Jeong, Dong-Young; Kim, Sangsig

ArticleIssue Date2008CitationSOLID STATE COMMUNICATIONS, v.148, no.7-8, pp 293 - 296PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
ZnO Nanowire Field-Effect Transistors with Floating Gate Nodes of Au Nanoparticles

Yeom, Donghyuk; Kang, Jeongmin; Yoon, Changjoon; Park, Byoungjun; Jeong, Dong-Young; Koh, Eui Kwan; Kim, Sangsig

ArticleIssue Date2009CitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.9, no.5, pp 3256 - 3260PublisherAMER SCIENTIFIC PUBLISHERS
SCIESCOPUS
ZnO Nanowire-Based Nonvolatile Memory Devices with Al2O3 Layers as Storage Nodes

Keem, Kihyun; Kang, Jeongmin; Yoon, Changjoon; Yeom, Donghyuk; Jeong, Dong-Young; Park, Byoungjun; Park, Jucheol; Kim, Sangsig

ArticleIssue Date2009CitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.9, no.7, pp 4240 - 4243PublisherAMER SCIENTIFIC PUBLISHERS
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