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ITO/Ag/ITO multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes
- Issue Date
- 1-Dec-2013
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICS LETTERS, v.38, no.23, pp.5055 - 5058
- Indexed
- SCIE
SCOPUS
- Journal Title
- OPTICS LETTERS
- Volume
- 38
- Number
- 23
- Start Page
- 5055
- End Page
- 5058
- ISSN
- 0146-9592
- Abstract
- ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300 degrees C to 500 degrees C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Omega/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N-2 gas at 500 degrees C. (C) 2013 Optical Society of America
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)