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Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility
- Issue Date
- 12월-2013
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- thin films; Sputtering; X-ray diffraction; Electrical properties
- Citation
- MATERIALS RESEARCH BULLETIN, v.48, no.12, pp.5080 - 5083
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 48
- Number
- 12
- Start Page
- 5080
- End Page
- 5083
- ISSN
- 0025-5408
- Abstract
- We report the resistive switching (RS) characteristics of tungsten nitride (WNx) thin films with excellent complementary metal-oxide-semiconductor (CMOS) compatibility. A Ti/WNx/Pt memory cell clearly shows bipolar RS behaviors at a low voltage of approximately +/- 2.2 V. The dominant conduction mechanisms at low and high resistance states were verified by Ohmic behavior and trap-controlled space-charge-limited conduction, respectively. A conducting filament model by a redox reaction explains the RS behavior in WNx films. We also demonstrate the memory characteristics during pulse operation, including a high endurance over >10(5) cycles and a long retention time of >10(5) s. (C) 2013 Elsevier Ltd. All rights reserved.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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