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Gate All Around Metal Oxide Field Transistor: Surface Potential Calculation Method including Doping and Interface Trap Charge and the Effect of Interface Trap Charge on Subthreshold Slope
- Authors
- Najam, Faraz; Kim, Sangsig; Yu, Yun Seop
- Issue Date
- Oct-2013
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Compact model; drain-source current; gate-all-around metal-oxide-semiconductor-field-effect-transistor (GAAMOSFET); interface trap distribution; scaling theory
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.5, pp.530 - 537
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 13
- Number
- 5
- Start Page
- 530
- End Page
- 537
- ISSN
- 1598-1657
- Abstract
- An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)