Forming-free SiN-based resistive switching memory prepared by RF sputtering

Abstract

A forming-free SiN-based resistive switching memory (RSM) device has been successfully realized using an RF sputtering method. With a 10-nm thick SiN film, the memory device showed forming-free switching behavior under +/- 2V/100ns. The conduction mechanisms at low- and high-resistance states were verified by Ohmic behavior and modified space-charge-limited conduction, respectively. In a reliability test, the device exhibits good endurance over 10(9) cycles and long data retention over 10(5)s at 85 degrees C. These results demonstrate that SiN-based RSM devices can be readily available without forming processes using an RF sputtering method. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim