Effect of boron and silicon doping on the surface and electrical properties of diamond like carbon films by magnetron sputtering technique
- Authors
- Park, Chang-Sun; Choi, Sun Gyu; Jang, Jin-Nyoung; Hong, MunPyo; Kwon, Kwang-Ho; Park, Hyung-Ho
- Issue Date
- 9월-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Diamond-like carbon; Silicon; Boron; Roughness; Resistivity
- Citation
- SURFACE & COATINGS TECHNOLOGY, v.231, pp.131 - 134
- Indexed
- SCIE
SCOPUS
- Journal Title
- SURFACE & COATINGS TECHNOLOGY
- Volume
- 231
- Start Page
- 131
- End Page
- 134
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/102358
- DOI
- 10.1016/j.surfcoat.2012.01.014
- ISSN
- 0257-8972
- Abstract
- To improve the surface and electrical properties, silicon (Si) and boron (B) were co-doped in diamond-like carbon (DLC) films prepared on silica substrates by RF magnetron sputtering. In the deposition of a Si, B co-doped DLC film, Si content was controlled by the number of intrinsic Si wafer piece and B content by B target power. The surface roughness and resistivity of film increased by increment in the C-C sp(3) bond content due to added Si and the surface roughness and resistivity of film decreased by decrement in the C-C sp(2) bond content due to added B. A C-C sp(3) bond content in the Si, B co-doped DLC films decreased from 47.4% to 36.5% with increasing B target power compared with from 46.7% to 23.9% in case of the only B doped DLC films. From this result, it can be said that Si can suppress a graphitization of DLC with presence of B. However, the surface roughness and resistivity values of Si, B co-doped DLC films decreased similarly as in only B doped DLC films with an increase in the B target power. These results were caused the Si-B sp(3) bonds formed smaller than Si sp(3) bonds with increase in the B target power as a result of the B-doping effect. In order to minimize the reduction in sp(3) bond content over the decrease roughness and resistivity, DLC films were prepared by Si, B co-doping. So, these films can be applied in chemical sensing, electro-synthesis, and electrochemical-based toxic waste detection, remediation, and so on at industrial level. (C) 2012 Elsevier B.V. All rights reserved.
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Collections - Graduate School > Department of Applied Physics > 1. Journal Articles
- Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles
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