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Observation of Highly Reproducible Resistive-Switching Behavior from Solution-Based ZnO Nanorods
- Issue Date
- Sep-2013
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Resistive Switching; ZnO Nanorod; Voltage Distribution
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.9, pp.6212 - 6215
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 13
- Number
- 9
- Start Page
- 6212
- End Page
- 6215
- ISSN
- 1533-4880
- Abstract
- The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)