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Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode
- Authors
- Yang, Seong-Uk; Choi, Seung-Ha; Lee, Jongtaek; Kim, Jeehwan; Jung, Woo-Shik; Yu, Hyun-Yong; Roh, Yonghan; Park, Jin-Hong
- Issue Date
- 5-6월-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Gallium arsenide; IGZO; Hetero-junction
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.561, pp.228 - 230
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 561
- Start Page
- 228
- End Page
- 230
- ISSN
- 0925-8388
- Abstract
- One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 degrees C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. On-current density (0.02 A/cm(2)) and on/off-current ratio (4 x 10(2)) were obtained in the junction annealed at 300 degrees C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples. (C) 2013 Elsevier B. V. All rights reserved.
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