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Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure
- Authors
- Xi, Yuyin; Liu, Lu; Hwang, Ya-Hsi; Phillips, Oluwadamilola; Ren, Fan; Pearton, Stephen J.; Kim, Jihyun; Hsu, Chien-Hsing; Lo, Chien-Fong; Johnson, Jerry Wayne
- Issue Date
- 5월-2013
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.31, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 31
- Number
- 3
- ISSN
- 1071-1023
- Abstract
- The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1% hydrogen by about 60% as compared to the response time defined as the diode current reaching 90% of its total changes, t(90). Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process. (C) 2013 American Vacuum Society.
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