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Gate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device
- Authors
- Park, Youn Ho; Shin, Sang-Hoon; Song, Jin Dong; Chang, Joonyeon; Han, Suk Hee; Choi, Heon-Jin; Koo, Hyun Cheol
- Issue Date
- 4월-2013
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Rashba effect; GaSb p-type quantum well; Complementary device; Spin transistor
- Citation
- SOLID-STATE ELECTRONICS, v.82, pp.34 - 37
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 82
- Start Page
- 34
- End Page
- 37
- ISSN
- 0038-1101
- Abstract
- The gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov-de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin-orbit interaction parameter of 1.71 x 10(-11) eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin. (C) 2013 Elsevier Ltd. All rights reserved.
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