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A CMOS-Process-Compatible ZnO-Based Charge-Trap Flash Memory
- Issue Date
- Feb-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Charge-trap Flash (CTF); ReCTF; resistive random-access memory (ReRAM); silicon/oxide/nitride/oxide/silicon (SONOS)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.34, no.2, pp.238 - 240
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 34
- Number
- 2
- Start Page
- 238
- End Page
- 240
- ISSN
- 0741-3106
- Abstract
- ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile memory. This device consists of metal/ZnO/nitride/oxide/silicon in order to make use of the electrical transport in the ZnO resistive switching layer. Compared to the previous devices with perovskite oxide materials used as a conduction path, the proposed device shows faster switching speeds (10 ns/100 mu s), lower operation voltages (+/- 7 V) for the program/erase (P/E) states, and higher endurance (10(6) P/E cycles), along with comparable retention properties.
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)