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Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors
- Authors
- Heo, K.; Hong, B. H.; Lee, E. H.; Lee, S. Y.; Kim, S.; Hwang, S. W.
- Issue Date
- Feb-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Amorphous silicon-doped indium-zinc-oxide (a-SIZO); barrier height; indium-zinc-oxide (IZO); oxide-metal-oxide (OMO); variable range hopping
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.34, no.2, pp.247 - 249
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 34
- Number
- 2
- Start Page
- 247
- End Page
- 249
- ISSN
- 0741-3106
- Abstract
- Temperature (T)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients a of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T -dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)