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Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs
- Authors
- Nam, Jungsik; Kang, Chang Yong; Kim, Kwang Pyo; Yeo, Hyeopgoo; Lee, Boung Jun; Seo, Sungkyu; Yang, Ji-Woon
- Issue Date
- 12월-2012
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Double-gate MOSFETs; ionizing radiation; multi-gate MOSFETs; short-channel effects; total-ionizing dose
- Citation
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.59, no.6, pp.3021 - 3026
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Volume
- 59
- Number
- 6
- Start Page
- 3021
- End Page
- 3026
- ISSN
- 0018-9499
- Abstract
- Effects of gamma-ray irradiation on short-channel effects (SCEs) in low-doped double-gate MOSFETs are experimentally examined for various fin widths and channel lengths. The different behavior of the effects in NMOS and PMOS devices are analyzed using three-dimensional (3-D) TCAD simulation. The physical interpretation for the influence of ionizing radiation on SCEs in low-doped multi-gate MOSFETs is provided. This successfully explains not only the degradation in NMOS, but also the improvement in PMOS for subthreshold characteristics by irradiation.
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