Flexible Logic Gates Composed of Si-Nanowire-Based Memristive Switches
- Authors
- Moon, Taeho; Jung, Ji-Chul; Han, Yong; Jeon, Youngin; Koo, Sang-Mo; Kim, Sangsig
- Issue Date
- 12월-2012
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Flexible electronics; logic gate; memristive switches; Si nanowire (NW); top-down approach
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.12, pp.3288 - 3291
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 59
- Number
- 12
- Start Page
- 3288
- End Page
- 3291
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/106882
- DOI
- 10.1109/TED.2012.2220778
- ISSN
- 0018-9383
- Abstract
- The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped p-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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