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High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared

Authors
Choi, WoongCho, Mi YeonKonar, AniruddhaLee, Jong HakCha, Gi-BeomHong, Soon CheolKim, SangsigKim, JeongyongJena, DebdeepJoo, JinsooKim, Sunkook
Issue Date
14-11월-2012
Publisher
WILEY-V C H VERLAG GMBH
Keywords
MoS2; phototransistors; transition metal dichalcogenide
Citation
ADVANCED MATERIALS, v.24, no.43, pp.5832 - 5836
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED MATERIALS
Volume
24
Number
43
Start Page
5832
End Page
5836
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/106942
DOI
10.1002/adma.201201909
ISSN
0935-9648
Abstract
Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm(2)V(-1)s(-1)), near-ideal subthreshold swings (similar to 70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.
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공과대학 (전기전자공학부)
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