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High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared
- Authors
- Choi, Woong; Cho, Mi Yeon; Konar, Aniruddha; Lee, Jong Hak; Cha, Gi-Beom; Hong, Soon Cheol; Kim, Sangsig; Kim, Jeongyong; Jena, Debdeep; Joo, Jinsoo; Kim, Sunkook
- Issue Date
- 14-Nov-2012
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- MoS2; phototransistors; transition metal dichalcogenide
- Citation
- ADVANCED MATERIALS, v.24, no.43, pp.5832 - 5836
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED MATERIALS
- Volume
- 24
- Number
- 43
- Start Page
- 5832
- End Page
- 5836
- ISSN
- 0935-9648
- Abstract
- Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm(2)V(-1)s(-1)), near-ideal subthreshold swings (similar to 70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)