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Flexible Nano-Floating-Gate Memory With Channels of Enhancement-Mode Si Nanowires
- Authors
- Jeon, Youngin; Lee, Myeongwon; Moon, Taeho; Kim, Sangsig
- Issue Date
- 11월-2012
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Field-effect transistor (FET); memory; nanocrystal (NC); nonvolatile; plastic substrate; Pt; silicon-nanowire (Si-NW) array; top-down approach
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.11, pp.2939 - 2942
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 59
- Number
- 11
- Start Page
- 2939
- End Page
- 2942
- ISSN
- 0018-9383
- Abstract
- The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n(+)-p-n(+) Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an ON-current/OFF-current ratio of similar to 10(7) and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to similar to 10(4) s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.
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