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Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications
- Authors
- Kim, Hee-Dong; An, Ho-Myoung; Kim, Tae Geun
- Issue Date
- 10월-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Resistive switching memory; Si3N4; Space charge limited current
- Citation
- MICROELECTRONIC ENGINEERING, v.98, pp.351 - 354
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 98
- Start Page
- 351
- End Page
- 354
- ISSN
- 0167-9317
- Abstract
- In this paper, the resistive-switching behavior of Si3N4 films using nitride-related traps in Ti/Si3N4/Ti memory cells is reported. Bipolar resistive switching behavior was clearly observed at a low voltage of about +/- 2.5 V. Compared to Au/Si3N4/Ti memory cells, the set and reset current of Ti/Si3N4/Ti memory cells was decreased from 5 mu A and 1.5 mA to 40 nA and 1 mu A, respectively, at V-read = 0.1 V. In addition, Ti/Si3N4/Ti memory cells showed improved endurance characteristics over 2.7 x 10(3) cycles. (C) 2012 Elsevier B.V. All rights reserved.
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