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Characteristics of Ultrashallow Hetero Indium-Gallium-Zinc-Oxide/Germanium Junction
- Authors
- Shin, Juhyeon; Shim, Jaewoo; Lee, Jongtaek; Choi, Seung-Ha; Jung, Woo-Shik; Yu, Hyun-Yong; Roh, Yonghan; Park, Jin-Hong
- Issue Date
- Oct-2012
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Germanium (Ge); heterojunction; indium-gallium-zinc-oxide (IGZO)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.33, no.10, pp.1363 - 1365
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 33
- Number
- 10
- Start Page
- 1363
- End Page
- 1365
- ISSN
- 0741-3106
- Abstract
- In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of similar to 37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 degrees C and 600 degrees C, a very high ON-current density (180-320 A/cm(2)), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 degrees C anneal, a fairly high ON/OFF-current ratio (7 x 10(2)) is also observed.
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Related Researcher
- Yu, Hyun Yong
- College of Engineering (School of Electrical Engineering)