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Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions
- Authors
- Jeong, Seong-Guk; Park, Hyung-Youl; Lim, Myung-Hoon; Jung, Woo-Shik; Yu, Hyun-Yong; Roh, Yonghan; Park, Jin-Hong
- Issue Date
- Sep-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Pentacene; Fermi-level pinning; Metal-pentacene
- Citation
- ORGANIC ELECTRONICS, v.13, no.9, pp.1511 - 1515
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 13
- Number
- 9
- Start Page
- 1511
- End Page
- 1515
- ISSN
- 1566-1199
- Abstract
- In this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 degrees C in N-2 ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced. (C) 2012 Elsevier B. V. All rights reserved.
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Related Researcher
- Yu, Hyun Yong
- College of Engineering (School of Electrical Engineering)