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Realization of One-Diode-Type Resistive-Switching Memory with Cr-SrTiO3 Film
- Authors
- Song, Min Yeong; Seo, Yujeong; Kim, Yeon Soo; Kim, Hee Dong; An, Ho-Myoung; Park, Bae Ho; Sung, Yun Mo; Kim, Tae Geun
- Issue Date
- 9월-2012
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Citation
- APPLIED PHYSICS EXPRESS, v.5, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 5
- Number
- 9
- ISSN
- 1882-0778
- Abstract
- The authors report a silicon-based one-diode-type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr-SrTiO3/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator-metal transition property of the proposed device was explained using the space-charge-limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio (similar to 10(6)), low reset current (similar to 10(-11) A), high speed at low voltage (200 ns, 2 V), and reasonable endurance (>10(4) cycles) and retention characteristics (>10(4) s). (C) 2012 The Japan Society of Applied Physics
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