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Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes
- Authors
- Lim, Myung-Hoon; Lee, In-Yeal; Jeong, Seong-Guk; Lee, Jongtaek; Jung, Woo-Shik; Yu, Hyun-Yong; Kim, Gil-Ho; Roh, Yonghan; Park, Jin-Hong
- Issue Date
- Jun-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Asymmetric S/D; Pentacene; OTFT
- Citation
- ORGANIC ELECTRONICS, v.13, no.6, pp.1056 - 1059
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 13
- Number
- 6
- Start Page
- 1056
- End Page
- 1059
- ISSN
- 1566-1199
- Abstract
- In this work, we propose the concept of achieving a lower off-current in organic thin film transistors (OTFTs) by asymmetric source/drain with low and high work-function metals. The artificial hole barrier height (h-BH) at the drain-channel junction formed by this method prevents hole carriers transport from source to drain through the pentacene layer during the off-state. On-current is not affected by this artificially formed h-BH because the effective h-BH is reduced in the on-state. As a result, in the asymmetric Ni-Ti and Ni-Al OTFTs, the off-currents are decreased by 12 and 18.3 times, respectively, compared to that in the symmetric S/D device. (C) 2012 Elsevier B.V. All rights reserved.
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Related Researcher
- Yu, Hyun Yong
- College of Engineering (School of Electrical Engineering)