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Single-String Carbon Nanotube Field Effect Transistors Fabricated by Two-Step Dielectrophoresis

Authors
Kim, Tae GeunHwang, Jong SeungYu, Yun SeopKang, Myung GilHwang, Sung Woo
Issue Date
Jun-2012
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.6
Indexed
SCIE
SCOPUS
Journal Title
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume
51
Number
6
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/108297
DOI
10.1143/JJAP.51.06FE02
ISSN
0021-4922
Abstract
Carbon nanotube field effect transistors (CNT FETs) with a long, single channel are an essential ingredient for gas and bio sensors, because a single spot modification of the channel can change the conductivity of the whole device. Herein, the two-step dielectrophoresis (DEP) technique was used to fabricate single string, single wall CNT FETs with a length longer than 10 mu m. The single string FET showed an on/off ratio and transconductance which are larger than those of the network FET on the same substrate. The observed characteristics were explained by a circuit simulation. We also demonstrated that our method could be applied to flexible substrates. (C) 2012 The Japan Society of Applied Physics
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