Single-String Carbon Nanotube Field Effect Transistors Fabricated by Two-Step Dielectrophoresis
- Authors
- Kim, Tae Geun; Hwang, Jong Seung; Yu, Yun Seop; Kang, Myung Gil; Hwang, Sung Woo
- Issue Date
- Jun-2012
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.6
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 51
- Number
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/108297
- DOI
- 10.1143/JJAP.51.06FE02
- ISSN
- 0021-4922
1347-4065
- Abstract
- Carbon nanotube field effect transistors (CNT FETs) with a long, single channel are an essential ingredient for gas and bio sensors, because a single spot modification of the channel can change the conductivity of the whole device. Herein, the two-step dielectrophoresis (DEP) technique was used to fabricate single string, single wall CNT FETs with a length longer than 10 mu m. The single string FET showed an on/off ratio and transconductance which are larger than those of the network FET on the same substrate. The observed characteristics were explained by a circuit simulation. We also demonstrated that our method could be applied to flexible substrates. (C) 2012 The Japan Society of Applied Physics
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