Metal/Dielectric Liner Formation by a Simple Solution Process for through Silicon via Interconnection

Abstract

We investigated the formation of metal and dielectric liners in via holes. We obtained a conformal deposition of the Ag metal and PVPh liners in Si deep via holes. The measured Ag liner thickness increased from 0.18 mu m to 1.44 mu m as the radius of the via hole was increased from 0.85 mu m to 5 mu m. We also obtained a conformal deposition of the PVPh dielectric liner of about 830 nm in thickness in 10 mu m deep via holes. The Ag metal and PVPh dielectric liners had uniform thickness on every region of their respective deep via holes. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.esl113678] All rights reserved.