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Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors
- Authors
- Kim, D. H.; Lee, J. K.; Huh, J. H.; Kim, Y. H.; Kim, G. T.; Roth, S.; Dettlaff-Weglikowska, U.
- Issue Date
- 11월-2011
- Publisher
- WILEY-BLACKWELL
- Keywords
- doping; p-type; SOCl2; SWCNTs
- Citation
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.248, no.11, pp.2668 - 2671
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Volume
- 248
- Number
- 11
- Start Page
- 2668
- End Page
- 2671
- ISSN
- 0370-1972
- Abstract
- We report on SOCl2 doping of separated single-walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electrical characteristics. Pristine semiconducting SWCNTs showed p-type transfer characteristics. After SOCl2 doping, the conductivity of semiconducting SWCNTs increased about two times and the on/off ratio decreased by a factor of 3. Mixed pristine samples showed slight p-type characteristics and turned to metallic characteristics after doping. The network of metallic SWCNTs did not show any significant change of conductivity before and after doping. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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