Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices
- Authors
- Kim, Hee-Dong; An, Ho-Myoung; Lee, Eui Bok; Kim, Tae Geun
- Issue Date
- 10월-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Atomic force microscopy (AFM); aluminum nitride (AlN); resistive switching (RS); space-charge-limited conduction (SCLC)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3566 - 3573
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 58
- Number
- 10
- Start Page
- 3566
- End Page
- 3573
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/111520
- DOI
- 10.1109/TED.2011.2162518
- ISSN
- 0018-9383
- Abstract
- The authors report upon the ultrafast bipolar switching characteristics observed in aluminum nitride (AlN)-based resistive random access memory devices ReRAMs. The set and reset states were measured to be as low as 2 mu A and 5 nA, respectively, at V-read = 0.1 V. Regarding pulse operations, very fast switching characteristics were achieved at 3 V/10 ns for the set operation and -3 V/10 ns for the reset operation. In addition, the AlN-based ReRAMs showed an endurance value of over similar to 10(8) cycles and a retention time of over ten years at 85 degrees C. These results show that this AlN-based ReRAM can be used as a promising high-speed nonvolatile memory device.
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