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58-72 GHz CMOS wideband variable gain low-noise amplifier
- Authors
- Kim, S.; Kim, H. -C.; Kim, D. -H.; Jeon, S.; Kim, M.; Rieh, J. -S.
- Issue Date
- 4-Aug-2011
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- ELECTRONICS LETTERS, v.47, no.16, pp.904 - 906
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 47
- Number
- 16
- Start Page
- 904
- End Page
- 906
- ISSN
- 0013-5194
- Abstract
- A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3 dB bandwidth of 14 GHz (58-72 GHz) is developed in a 65 nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8 dB with a 1 dB gain flatness of 10 GHz (60-70 GHz). With tuning voltage adjusted from 0.8 to 2.8 V, the gain and noise figure are varied from 21.8 to 12.8 dB and from 4.2 to 5.7 dB, respectively, at 64 GHz. Input P-1dB was measured to be -22.1 dBm. DC power consumption is 36 mW with V-DD = 1.2 V and the chip size is 0.75 x 0.65 mm.
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Related Researcher
- Jeon, Sang geun
- College of Engineering (School of Electrical Engineering)