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Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors
- Authors
- Kim, Hee-Dong; An, Ho-Myoung; Seo, Yujeong; Kim, Tae Geun
- Issue Date
- 8월-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- AlN; nonvolatile memory (NVM); transparent resistive random access memory (ReRAM) (T-ReRAM)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.32, no.8, pp.1125 - 1127
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 32
- Number
- 8
- Start Page
- 1125
- End Page
- 1127
- ISSN
- 0741-3106
- Abstract
- This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AlN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under +/- 3 V/10 ns with a high-to-low resistance ratio greater than 10(2). In the reliability test, the device showed an endurance of > 10(8) cycles and a retention time of > 10(5) s at 85 degrees C. We believe that the AlN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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