Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes
- Authors
- Lee, Sang Youl; Choi, Kwang Ki; Jeong, Hwan Hee; Kim, Eun Joo; Song, June O.; Jeon, Joon-Woo; Seong, Tae-Yeon
- Issue Date
- 7월-2011
- Publisher
- A V S AMER INST PHYSICS
- Keywords
- gallium compounds; III-V semiconductors; light emitting diodes; plasma materials processing; Schottky barriers; wide band gap semiconductors; X-ray photoelectron spectra
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.29, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 29
- Number
- 4
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112149
- DOI
- 10.1116/1.3607315
- ISSN
- 1071-1023
- Abstract
- We investigated the effect of O-2 plasma-induced current blocking regions (O-2-CBRs) on the performance of GaN-based vertical light-emitting diodes (VLEDs) as a function of the O-2 plasma rf power. The VLEDs fabricated with the O-2-CBRs give forward voltages in the range 3.41-3.48 V at 350 mA, which are slightly higher than those in the case of VLEDs with and without SiO2 current-blocking layers (CBLs). The output powers of VLEDs with O-2-CBRs for rf powers of 50 and 100 W are 400.2 and 399.4 mW, respectively, which are slightly higher than those of the VLEDs with SiO2 CBLs. Indium tin oxide (ITO)-based contacts to p-GaN show rectifying behaviors with Schottky barrier heights of 1.89 and 2.78 eV, when treated at rf powers of 50 and 100 W, respectively. X-ray photoemission spectroscopy (XPS) results show that for the samples treated at 50 W, the Ga 2p core level moves toward the higher binding-energy side as compared to that of the reference sample without plasma treatment. On the basis of the electrical characteristics and XPS results, we state that the O-2-CBR effect is due to the generation of donor-like defects at the p-GaN surface. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3607315]
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