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High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction
- Authors
- Seo, Yujeong; An, Ho-Myoung; Kim, Hee-Dong; Hwang, In Rok; Hong, Sa Hwan; Park, Bae Ho; Kim, Tae Geun
- Issue Date
- 20-Apr-2011
- Publisher
- IOP PUBLISHING LTD
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.44, no.15
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 44
- Number
- 15
- ISSN
- 0022-3727
- Abstract
- A novel charge-trapping nonvolatile memory using gate injection switching is demonstrated in this paper. This device is composed of metal/NiO/nitride/oxide/silicon in order to make use of the electrical transport phenomenon found in NiO tunnel junctions. Compared with the reference structure of a conventional metal/oxide/nitride/oxide/silicon memory, the proposed device showed a larger memory window, very fast switching speeds of 100 ns/1 mu s and a low operation voltage of +/- 5V for the program/erase states. In addition, we observed that a large number of interface states in the bottom oxide were reduced using deep-level transient spectroscopy.
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)