Improved Crystal Quality and Surface Morphology of Nonpolar a-plane GaN Grown on r-plane Sapphire Substrates
- Authors
- Kim, Dong Ho; Kim, Su Jin; Chae, Doug Ju; Yang, Ji Won; Sim, Jae In; Kim, Tae Geun; Hwang, Sung Min
- Issue Date
- 4월-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Nonpolar; GaN; MOCVD; Crystallinity; Surface morphology
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.4, pp.873 - 877
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 58
- Number
- 4
- Start Page
- 873
- End Page
- 877
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112768
- DOI
- 10.3938/jkps.58.873
- ISSN
- 0374-4884
- Abstract
- In this paper, we report on the improved crystal quality and surface morphology of nonpolar a-plane ([11-20]) GaN layers grown on r-plane ([1-102]) sapphire substrates by using a metal-organic chemical vapor deposition. Both the reactor pressure and the V/III ratio were modulated using two-steps during the growth in order to optimize the growth conditions for the fully coalesced GaN layers with smooth surfaces. As a result, a root-mean-square roughness of 0.678 rim was observed with atomic-force microscopy for the nonpolar a-plane GaN, and the full-widths at half-maximum values of the omega-rocking curve were 432 and 648 arcsec from the c- and the in-direction parallel scans, respectively. The low-temperature photoluminescence spectra were also investigated to identify the origin of the improvement in the crystallinity.
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