Fabrication of Nanometer-scale Pillar Structures by Using Nanosphere Lithography
- Authors
- Yang, Ji Won; Sim, Jae In; An, Ho Myoung; Kim, Tae Geun
- Issue Date
- 4월-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Gallium nitride (GaN); Light-emitting diode (LED); Nanosphere lithography (NSL)
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.4, pp.994 - 997
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 58
- Number
- 4
- Start Page
- 994
- End Page
- 997
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/112802
- DOI
- 10.3938/jkps.58.994
- ISSN
- 0374-4884
- Abstract
- In this work, we have successfully fabricated a periodic array of nanostructures on the GaN, sapphire and silicon substrates by using a nanosphere lithography. First; a polystyrene nanosphere monolayer with a diameter of 500 nm was spin-coated on the substrates; then, an oxygen plasma was applied to the monolayer using a reactive ion etching system to make spacings among the nanospheres so that one could control the on/off ratio of the pitch and the shape of the nanoscale pillar structures. Next, evenly-spaced polystyrene nanospheres were used as a mask for inductively-coupled plasma reactive ion etching to make nanoscale pillar structures of different shapes and depths on the substrates. These experimental results are expected to offer a milestone for the application of nanostructures to various semiconductor devices.
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