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Low-Resistance Nonalloyed Ti/Al Ohmic Contacts on N-Face n-Type GaN via an O-2 Plasma Treatment
- Authors
- Kim, Su Jin; Nam, Tae Yang; Kim, Tae Geun
- Issue Date
- 2월-2011
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- GaN; N-face; ohmic contacts; oxygen plasma
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.32, no.2, pp.149 - 151
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 32
- Number
- 2
- Start Page
- 149
- End Page
- 151
- ISSN
- 0741-3106
- Abstract
- The authors report improved electrical properties of nonalloyed Ti/Al ohmic contact to N-face n-type GaN via oxygen (O-2) plasma treatment. The contact resistivity of Ti (50 nm)/Al (35 nm) electrodes is reduced significantly from 4.3 x 10(-1) Omega.cm(2) to 2.53 x 10(-5) Omega.cm(2) by applying O-2 plasma to the GaN surface before the Ti/Al deposition. In this process, Ti-N bonds are expected to form, while the Ga-N bonds are broken by the O-2 plasma, which eventually increases the nitrogen vacancies as well as the Ti-N phases at the GaN surface. This suggestion has been verified by X-ray photoelectron spectroscopy and transmission electron microscopy analyses.
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