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Development of higher performance indium tin oxide films at a very low temperature (< 80 degrees C) by the neutral beam-assisted sputtering process

Authors
Jang, Jin NyoungLee, You JongLee, Jun YoungJang, Yun SungHong, MunPyoOh, Kyoung SukYoo, Suk JaeKim, DaechulLee, BonjuJang, Won-Gun
Issue Date
31-Jan-2011
Publisher
ELSEVIER SCIENCE SA
Keywords
Neutral beam assisted deposition; Indium tin oxide; Low temperature deposition; Sputtering; Nano crystalline
Citation
THIN SOLID FILMS, v.519, no.7, pp.2098 - 2102
Indexed
SCIE
SCOPUS
Journal Title
THIN SOLID FILMS
Volume
519
Number
7
Start Page
2098
End Page
2102
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/113238
DOI
10.1016/j.tsf.2010.10.041
ISSN
0040-6090
Abstract
At very low temperatures (<80 degrees C), improved performance indium tin oxide (ITO) thin films with a low resistivity of 4.22 x 10(-4) Omega cm and high transmittance >90% at 550 nm were developed using the neutral beam-assisted sputtering (NBAS) technique, which included a cyclic inter-treatment process with an Ar neutral beam. Transmission electron microscopy and electron diffraction showed that the neutral particles with hyper-thermal energy was able to enhance the formation of the nano-crystalline phase and activate the dopant without additional heating or plasma damage during ITO thin film deposition. (C) 2010 Elsevier B.V. All rights reserved.
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